2021 |2020 |2019 |2018 | 2017 |2016 |2015 |2014 | 2013 | 2012 | 2011 | 2010 | 2009 |2008 | 2007 | 2006 | 2005 | Before 2005:
2025
71. Nimarta Kaur Chowdhary, and Theodosia Gougousi; Temperature-Dependent Properties of Atomic Layer Deposition-Grown TiO2 Thin Films Advanced Materials Interfaces, 1, 2400855 (2025).
2024
70. Nimarta Kaur Chowdhary, and Theodosia Gougousi; Extracting the Optical Constants of Partially Absorbing TiO2 ALD Films Coatings, 14, 1555 (2024).
69. Theodosia Gougousi, Jaron A Kropp, and Can Ataca; Surface functionalization and atomic layer deposition of metal oxides on MoS2 surfaces SPIE Proceedings Volume 13114, Low-Dimensional Materials and Devices 2024; 131140B (2024).
2021
68. Theodosia Gougousi; Low-temperature dopant-assisted crystallization of HfO2 thin films ACS Crystal Growth & Design 21, 11, 6411–6416 (2021).
2020
67. Jaron A. Kropp, Ankit Sharma, Wenjuan Zhu, Can Ataca, and Theodosia Gougousi;
Surface Defect Engineering of MoS2 for Atomic Layer Deposition of TiO2 Films ACS Appl. Mater. Interfaces 12, 42, 48150–48160, (2020).66. Robinson Kuis, Theodosia Gougousi, Isaac Basaldua, Paul Burkins, Jaron A Kropp, Anthony M Johnson; Large Third-Order Nonlinearities in Atomic Layer Deposition Grown Nitrogen-Enriched TiO2 Nanoscale Films 2020 IEEE Research and Applications of Photonics in Defense Conference (RAPID).
65. Molly A. May, David Fialkow, Tong Wu, Kyoung‐Duck Park, Haixu Leng, Jaron A. Kropp, Theodosia Gougousi, Philippe Lalanne, Matthew Pelton, Markus B. Raschke; Nano‐Cavity QED with Tunable Nano‐Tip Interaction Advanced Quantum Technologies 3(2), 1900087 (2020).
2019
64. R Kuis, Theodosia Gougousi, I Basaldua, P Burkins, JA Kropp, AM Johnson; Engineering of Large Third-Order Nonlinearities in Atomic Layer Deposition Grown Nitrogen-Enriched TiO2 ACS Photonics 6 (11), 2966-2973 (2019).
63. R Kuis, I Basaldua, P Burkins, JA Kropp, Theodosia Gougousi, AM Johnson; Third-Order Nonlinear Optical Properties of ALD Grown TiO2 Thin Films Laser Science, JW3A. 35 (2019).
62. K.-D. Park, M. A. May, H. Leng, J. Wang, J. A. Kropp, Theodosia Gougousi, M. Pelton, and M. B. Raschke; Tip-enhanced strong coupling spectroscopy and control of a single quantum emitter Sci. Adv. 5, eeav5931 (2019).
61. Molly A. May, Kyoung-Duck Park, Haixu Leng, Jaron A. Kropp, Theodosia Gougousi, Matthew Pelton, and Markus B. Raschke; Tip-Enhanced Strong Coupling of a Single Emitter at Room Temperature CLEO: QELS_Fundamental Science FF3M. 4 (2019).
2018
60. Jaron A. Kropp, Y Cai, Z Yao, W Zhu, Theodosia Gougousi; Atomic layer deposition of Al2O3 and TiO2 on MoS2 surfaces Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 36(6), 06A101 (2018).
59. Isaac Basaldua, Paul Burkins, Robinson Kuis, Jaron A. Kropp, Theodosia Gougousi, Anthony M. Johnson; Third-Order Nonlinear Optical Properties of ALD Grown TiO2 Films by Thermally Managed Z-scan Method Laser Science, JW4A. 37 (2018).
2017
58. Liwang Ye, Jaron A. Kropp and Theodosia Gougousi; In situ Infrared Spectroscopy Study of the Surface Reactions During the Atomic Layer Deposition of TiO2 on GaAs (100) Surfaces Applied Surface Science 422, 666–674 ( 2017).
2016
57. Alex J. Henegar, and Theodosia Gougousi; Comparison of the reactivity of alkyl and alkyl amine precursors with native oxide GaAs (100) and InAs (100) surfaces, Applied Surface Science 390, 870-881 (2016).
56. Theodosia Gougousi; Review: Atomic layer deposition of high-k dielectrics on III–V semiconductor surfaces, Progress in Crystal Growth and Characterization of Materials 62 (4), 1-21 (2016).
55. Pietro Strobbia, Alex Henegar, Theodosia Gougousi, and Brian M. Cullum; Layered Gold and Titanium Dioxide Substrates for Improved Surface Enhanced Raman Spectroscopic Sensing Applied Spectroscopy, 0003702816647964 (2016).
54. Alex J. Henegar, and Theodosia Gougousi; Native oxide transport and removal during the atomic layer deposition of Ta2O5 on InAs (100) surfaces J. Vac. Sci. Technol. A 34 (3), 031101 (2016).
53. Alex J. Henegar, Andrew J. Cook, Phillip Dang, and Theodosia Gougousi; Native Oxide Transport and Removal During the Atomic Layer Deposition of TiO2 Films on GaAs (100) Surfaces ACS applied materials & interfaces 8 (3), 1667–1675 (2016).
52. Liwang Ye and Theodosia Gougousi; Diffusion and interface evolution during the atomic layer deposition of TiO2 on GaAs(100) and InAs(100) surfaces J. Vac. Sci. Technol. A34, 01A105 (2016).
2015
51. Pietro Strobbia, Alex Henegar, Theodosia Gougousi, and Brian M. Cullum; Characterization of the role of oxide spacers in multilayer-enhanced SERS probes SPIE Sensing Technology+ Applications, 94870P-94870P-8 (2015).
50. Alex J. Henegar and Theodosia Gougousi; Stability and Surface Reactivity of Anatase TiO2 Films ECS Journal of Solid State Science and Technology, 4 (8) P298-P304 (2015).
2014
49. David A. Deen, David F. Storm, David J. Meyer, Robert Bass, Steven C. Binari, Theodosia Gougousi and Keith R. Evans; Impact of barrier thickness on transistor performance in AlN/GaN high electron mobility transistors grown on free-standing GaN substrates Applied Physics Letters 105 , 093503 (2014).
48. Liwang Ye and Theodosia Gougousi; In situ infrared spectroscopy study of the interface self-cleaning during the atomic layer deposition of HfO2 on GaAs(100) surfaces Applied Physics Letters 105, 121604 (2014).
2013
47. Liwang Ye and Theodosia Gougousi; Indium Diffusion and Native Oxide Removal during the Atomic Layer Deposition (ALD) of TiO2 Films on InAs(100) Surface ACS Appl. Mater. Interfaces 5(16), 8081–8087, (2013).
46. D.F. Storm, D.A. Deen, D.S. Katzer, D.J. Meyer, S.C. Binari, Theodosia Gougousi, T. Paskova, E.A. Preble, K.R. Evans, David J. Smith; Ultrathin-barrier AlN/GaN heterostructures grown by rf plasma-assisted molecular beam epitaxy on freestanding GaN substrates Journal of Crystal Growth 380, 14–17 (2013).
45. Jacqueline H. Yim, Victor Rodriguez-Santiago, André A. Williams, Theodosia Gougousi, Daphne D. Pappas, James K. Hirvonen; Atmospheric Pressure Plasma Enhanced Chemical Vapor Deposition of Hydrophobic Coatings using Fluorine-based Liquid Precursors Surface and Coatings Technology 234, 21–32, (2013).
44. David J. Meyer, David A. Deen, David F. Storm, Mario G. Ancona, D. Scott Katzer, Robert Bass, Jason A. Roussos, Brian P. Downey, Steven C. Binari, Theodosia Gougousi, Tanya Paskova, Edward A. Preble, and Keith R. Evans; High Electron Velocity Sub-Micron AlN/GaN HEMTs on Free-Standing GaN Substrates IEEE Electron Device Letters 34(2) 199 – 201 (2013).
2012
43. Theodosia Gougousi and Liwang Ye; Interface Between Atomic Layer Deposition Ta2O5 Films and GaAs(100) Surfaces J. Phys. Chem. C, 116 (16), 8924–8931 (2012).
2011
42. David A. Deen, David F. Storm, David J. Meyer, D. Scott Katzer, Robert Bass, Steven C. Binari, and Theodosia Gougousi; AlN/GaN HEMTs with high-k ALD HfO2 or Ta2O5 gate insulation Physica Status Solidi C: Current Topics in Solid State Physics, 8(7-8), 2420–2423 (2011).
41. D. J. Meyer, D. S. Katzer, D. A. Deen, D. F. Storm, S. C. Binari, and Theodosia Gougousi; HfO2-insulated gate N-polar GaN HEMTs with high breakdown voltage Physica Status Solidi A: Applications and Materials Science, 208(7), 1630-1633 (2011).
40. D.A. Deen, D.F. Storm, R. Bass, D.J. Meyer, D. S. Katzer, S.C. Binari, J.W. Lacis, and Theodosia Gougousi; Atomic layer deposited Ta2O5 gate insulation for enhancing breakdown voltage of AlN/GaN high electron mobility transistors Applied Physics Letters, 98, 023506 (2011).
2010
39. Theodosia Gougousi J. Derek Demaree, and John W. Lacis; Growth and Interface Evolution of HfO2 Films on GaAs(100) Surfaces J. Electrochem. Soc., 157(5), H551-H556 (2010).
38. Gougousi Theodosia; and Lacis John W.; Native oxide consumption during the atomic layer deposition of TiO2 films on GaAs (100) surfaces Thin Solid Films, 518, 2006–2009 (2010) Copyright © 2009 Elsevier B.V.
2009
37. Hackley Justin C.; and Gougousi Theodosia; Properties of atomic layer deposited HfO2 thin films Thin Solid Films 517, 6576-6583 (2009).
36. Hackley Justin C; Demaree J. Derek; Lacis John W.;and Gougousi Theodosia; Atomic Layer Deposition of Metal Oxide Films on GaAs (100) surfaces in CMOS Gate-Stack Scaling — Materials, Interfaces and Reliability Implications, edited by J. Butterbaugh, A. Demkov, R. Harris, W. Rachmady, B. Taylor (Mater. Res. Soc. Symp. Proc. Volume 1155, Warrendale, PA, 2009)1155-C10-03.
35. D.A. Deen, S.C. Binari, D.F. Storm, D.S. Katzer, J.A. Roussos, J.C. Hackley, and Theodosia Gougousi; AlN/GaN insulated gate HEMTs with HfO2 gate dielectric Electron. Lett. 45, 423-424, (2009)
2008
34. Hackley Justin C; Demaree J. Derek; and Gougousi Theodosia; Growth and interface of HfO2 films on H-terminated Si from a TDMAH and H2O atomic layer deposition process, J. Vac. Sci. Technol. A (2008) 25(5), 1235-1240.
33. Hackley Justin C; Demaree J. Derek; and Gougousi Theodosia; Atomic Layer Deposition of HfO2 Thin Films on Si and GaAs Substrates in Materials Science of High-k Dielectric Stacks—From Fundamentals to Technology, edited by L. Pantisano, E. Gusev, M. Green, M. Niwa (Mater. Res. Soc. Symp. Proc. Volume 1073E, Warrendale , PA , 2008).
32. Hackley Justin C; Demaree J. Derek; and Gougousi Theodosia; Interface of atomic layer deposited HfO2 films on GaAs (100) surfaces, Applied Physics Letters 92(16), 162902 (2008). Selected for a simultaneous publication in the Virtual Journal of Nanoscale Science & Technology 17(18), 2008
31. Gougousi Theodosia; Zhiying Chen; Deposition of Yttrium Oxide Thin Films in Supercritical Carbon Dioxide Thin Solid Films 516, 6197–6204 (2008).
2007
30. Gougousi Theodosia; Chen Zhiying; Low temperature deposition of metal oxide thin films in supercritical carbon dioxide using metal-organic precursors in Organic/Inorganic Hybrid Materials— edited by R.M. Laine, C. Sanchez, C. Barbé , U. Schubert (Mater. Res. Soc. Symp. Proc. Volume 1007, Warrendale, PA, 2007).
30. Hackley Justin C; Demaree J. Derek; and Gougousi Theodosia; Nucleation of HfO2 atomic layer deposition films on chemical oxide and H-terminated Si J. Appl. Phys. 102, 034101 (2007).
28. Hackley Justin C; Demaree J. Derek; and Gougousi Theodosia; Nucleation Studies of HfO2 Thin Films Produced by Atomic Layer Deposition Characterization of Oxide/ Semiconductor Interfaces for CMOS Technologies, edited by Y. Chabal, A. Estève, N. Richard, G. Wilk (Mater. Res. Soc. Symp. Proc. Volume 996E, Warrendale, PA, 2007).
2006
27. Gougousi Theodosia; Terry David B.; and Parsons Gregory N. Charge generation during oxidation of thin Hf metal films on silicon Thin Solid Films 513(1-2), 201-205 (2006).
26. Barua, Dipak; Gougousi, Theodosia; Young, Erin D.; Parsons, Gregory N. Supercritical-Carbon-Dioxide-Assisted Cyclic Deposition of Metal Oxide and Metal Thin Films Applied Physics Letters (2006) 88, 092904.
2005
25. Gougousi, Theodosia; Barua, Dipak; Young, Erin D.; Parsons, Gregory N. Metal Oxide Thin Films Deposited from Metal Organic Precursors in Supercritical CO2 Solutions Chemistry of Materials (2005) 17(20) pp 5093 – 5100.
24. Park Kie-Jin; Doub Jason M.; Gougousi Theodosia; and Parsons Gregory N. Microcontact patterning of ruthenium gate electrodes by selective area atomic layer deposition Appl. Phys. Lett. (2005) 86, 051903.
Before 2005:
23.Gougousi, Theodosia; and Parsons, Gregory N. Post-Deposition Reactivity of Sputter-Deposited High-Dielectric-Constant Films with Ambient H2O and Carbon-Containing Species J. Appl. Phys. (2004), 95(3), 1391-1696.
22. Gougousi Theodosia; Niu Dong, Ashcraft Robert W., and Parsons Gregory N. Carbonate Formation During Post-Deposition Ambient Exposure of High-k Dielectrics Appl. Phys. Lett. (2003) 83(17), 3543-3545.
21. Gougousi, Theodosia; Kelly, M. Jason; and Parsons, Gregory N. Kinetics Of Charge Generation During Formation Of Hf And Zr Silicate Dielectrics dielectrics in CMOS Front-End Materials and Process Technology edited by Tsu-Jae King, Bin Yu, Robert J.P. Lander,
Shuichi Saito (Mat. Res. Soc. Symp. Proc. Volume 765D, Warrendale, PA, 2003), D3.4, © 2003 Materials Research Society20. Gougousi, Theodosia; Kelly, M. Jason; Terry, David B.; and Parsons, Gregory N. Properties of La-silicate high-k dielectric films formed by oxidation of La on Silicon, J. Appl. Phys. (2003), 93(3), 1691-1696.
19. Xu, Yiheng; Gougousi, Theodosia; Henn-Lecordier, Laurent; Liu, Yijun; Cho, Soon; and Rubloff, Gary W. Thickness Metrology and End Point Control in W-CVD Process from SiH4/WF6 Using in-situ Mass Spectrometry, J. Vac. Sci. Technol., B (2002), 20(6) 2351-2360.
18. Gougousi, Theodosia; Kelly, Michael J.; Parsons, Gregory N. The role of the OH species in high-k/polysilicon gate electrode interface reactions Appl. Phys. Let. (2002) 80(23), 4419-4421.
17. Sreenivasan, Ramaswamy; Gougousi, Theodosia; Xu, Yiheng; Kidder, John, N. Jr.; Zafiriou, Evanghelos; Rubloff, Gary W. Run to run control in tungsten chemical vapor deposition using H2/WF6 at low pressures J. Vac. Sci. Technol., B (2001), 19(5), 1931-1941.
16. Gougousi, Theodosia; Sreenivasan, Ramaswamy; Xu, Yiheng; Henn-Lecordier, Laurent; Rubloff, Gary W.; Kidder, John N., Jr.; Zafiriou, Evanghelos. In-situ sensing using mass spectrometry and its use for run-to-run control on a W-CVD cluster tool
AIP Conf. Proc. (2001), 550 (Characterization and Metrology for ULSI Technology), 249-253.15. Johnsen, Rainer; Skrzypkowski, Miroslaw; Gougousi, Theodosia; Rosati, Richard; Golde, Michael. F. Optical Spectroscopy of Recombining Ions in Flowing Afterglow Plasmas, The Dissociative Recombination of Molecules with Electrons, [Proceedings of the American Chemical Society Symposium “Dissociative Recombination of Molecules with Electrons”], Chicago, ed. S. L. Guberman, (Kluwer Academic / Plenum Publishers), (2003) .
14. Gougousi, Theodosia; Xu, Yiheng; Kidder, John N., Jr.; Rubloff, Gary W.; Tilford, Charles R. Process diagnostics and thickness metrology using in situ mass spectrometry for the chemical vapor deposition of W from H2/WF6 J. Vac. Sci. Technol., B (2000), 18(3), 1352-1363.
13. Gougousi, Theodosia; Xu, Yiheng; Henn-Lecordier, Laurent; Kidder John N., Jr; Rubloff Gary W.; Tilford, Charles C.
Real-Time Chemical Sensing in Thin Film Multicomponent CVD, AVS 2nd International Conference on Advanced Materials and Processes for Microelectronics (2000).12. Johnsen, Rainer; Skrzypkowski, Miroslaw; Gougousi, Theodosia; Golde, Michael. F.; Spectroscopic emissions from the recombination of N2O+, N2OH+/HN2O+, CO2+, CO2H+, HCO+/COH+, H2O+, NO2+, HNO+, and LIF measurements of the H atom yield from H3+. Dissociative Recombination: Theory, Experiment and Applications IV, Proceedings of the Conference, Stockholm, Sweden, June 16-20, 1999, 200-209, (2000).
11. Samartzis, Peter C.; Gougousi, Theodosia; Kitsopoulos, Theofanis N.; Photofragmentation of Cl2 at 308 nm Laser Chem. (1998), 17(4), 185-190.
10. Skrzypkowski, Miroslaw P.; Gougousi, Theodosia; Johnsen, Rainer; Golde, Michael F.; Measurement of the absolute yield of CO(a3Π)+ O products in the dissociative recombination of CO2+ ions with electrons J. Chem. Phys. (1998), 108(20), 8400-8407.
9. Gougousi, Theodosia; Samartzis, Peter C.; Kitsopoulos, Theofanis N. Photodissociation study of CH3Br in the first continuum J. Chem. Phys. (1998), 108(14), 5742-5746.
8. Gougousi, Theodosia; Johnsen, Rainer; Golde, Michael F. Yield determination of OH (v=0,1) radicals produced by the electron-ion recombination of protonated molecules J. Chem. Phys. (1997), 107(7), 2440-2450.
7. Gougousi, Theodosia; Johnsen, Rainer; Golde, Michael F. Yield determination of OH(v = 0, 1) radicals produced by the electron-ion recombination of H3O+ions J. Chem. Phys. (1997), 107(7), 2430-2439.
6. Samartzis, Peter C.; Sakellariou, Ioannis; Gougousi, Theodosia; Kitsopoulos, Theofanis N. Photofragmentation study of Cl2 using ion imaging. J. Chem. Phys. (1997), 107(1), 43-48.
5. Gougousi, Theodosia; Golde, Michael F.; Johnsen, Rainer. Electron-ion recombination rate coefficient measurements in a flowing afterglow plasma. Chem. Phys. Lett. (1997), 265(3-5), 399-403.
4. Johnsen, Rainer; Gougousi, Theodosia; Golde, Michael F. Recombination of H3+ and D3+ ions with electrons, AIP Conf. Proc. (1995), 360 (Physics of Electronic and Atomic Collisions), 835-844.
3. Johnsen, Rainer; Gougousi, Theodosia; Golde, Michael F. Flowing-afterglow measurements of the recombination of H3+ and D3+ ions. Dissociative Recomb., Proc. Workshop, 3rd (1996), Meeting Date 1995, 195-206.
2. Gougousi, Theodosia; Johnsen, Rainer; Golde, Michael F. Recombination of H3+ and D3+ ions in a flowing afterglow plasma Int. J. Mass Spectrom. Ion Processes (1995), 149/150 131-151.
1. Johnsen, Rainer; Shun’ko, Eugeny V.; Gougousi, Theodosia; Golde, Michael F. Langmuir-probe measurements in flowing afterglow plasmas Phys. Rev. E: Stat. Phys., Plasmas, Fluids, Relat. Interdiscip. Top. (1994), 50(5), 3994-4004.